Part Number Hot Search : 
TCK104G 2SK18 HFBR1526 1N2970 00095 21002 PIC16F72 03070
Product Description
Full Text Search

SSP60N06 - N CHANNEL POWER MOSFETS

SSP60N06_282331.PDF Datasheet

 
Part No. SSP60N06 SSP60N05 SSP60N0X
Description N CHANNEL POWER MOSFETS

File Size 268.09K  /  5 Page  

Maker


Samsung Electronic
SAMSUNG[Samsung semiconductor]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: SSP60N06
Maker: FAIRCHIL..
Pack: TO-220
Stock: Reserved
Unit price for :
    50: $0.38
  100: $0.36
1000: $0.35

Email: oulindz@gmail.com

Contact us

Homepage http://www.samsung.com/Products/Semiconductor/
Download [ ]
[ SSP60N06 SSP60N05 SSP60N0X Datasheet PDF Downlaod from Datasheet.HK ]
[SSP60N06 SSP60N05 SSP60N0X Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for SSP60N06 ]

[ Price & Availability of SSP60N06 by FindChips.com ]

 Full text search : N CHANNEL POWER MOSFETS


 Related Part Number
PART Description Maker
IXFH32N50Q IXFT32N50Q 32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET?/a> Power MOSFETs Q-Class
HiPerFET⑩ Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
IXYS Corporation
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
INTERSIL[Intersil Corporation]
Intersil, Corp.
IRFU110 IRFR110 FN3275 From old datasheet system
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
(IRFR110 / IRFU110) N-Channel Power MOSFETs
HARRIS SEMICONDUCTOR
Intersil Corporation
IXFH80N10Q IXFT80N10Q N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Q-Class
IXYS Corporation
FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
INTERSIL[Intersil Corporation]
Intersil, Corp.
APT1001RBLC APT1001RSLC APT1001 POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
MRF18085A MRF18085AR3 MRF18085ALSR3 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
http://
MOTOROLA[Motorola, Inc]
MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
Motorola, Inc
HUFA75433S3ST HUFA75433S3S N-Channel UltraFET R MOSFETs 60V, 64A, 16mOhm
N-Channel UltraFET MOSFETs 60V/ 64A/ 16m
N-Channel UltraFET MOSFETs 60V, 64A, 16mз 64 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压,1.50欧姆,拉德硬,SEGR性,P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
Intersil, Corp.
INTERSIL[Intersil Corporation]
IXFH76N07-12 IXFH76N06-11 IXFH76N06-12 IXFH76N07-1 HiPerFET Power MOSFETs 76 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 76 A, 70 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
HiPerFET Power MOSFETs 76 A, 70 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
HiPerFET Power MOSFETs 76 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Discrete MOSFETs: HiPerFET Power MOSFETS
IXYS, Corp.
IXYS[IXYS Corporation]
FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆,拉德硬,SEGR耐,N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
 
 Related keyword From Full Text Search System
SSP60N06 instruments SSP60N06 Mode SSP60N06 barrier SSP60N06 electronics SSP60N06 Step
SSP60N06 Data SSP60N06 bookmark SSP60N06 positive SSP60N06 mount SSP60N06 display
 

 

Price & Availability of SSP60N06

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.2050940990448